대한전자공학회논문지SD (Journal of the Institute of Electronics Engineers of Korea SD)

대한전자공학회 (The Institute of Electronics and Information Engineers)
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텅스텐 실리사이드를 차세대 게이트 전극으로 이용한 MOS 소자의 특성 분석

Characteristics of Metal-Oxide- Semiconductor (MOS) Devices with Tungsten Silicide for Alternate Gate Metal

  • 노관종 (성균관대학교 전기전자 및 컴퓨터공학부) ;
  • 윤선필 (성균관대학교 전기전자 및 컴퓨터공학부) ;
  • 양성우 (성균관대학교 전기전자 및 컴퓨터공학부) ;
  • 노용한 (성균관대학교 전기전자 및 컴퓨터공학부)
  • No, Gwan-Jong (Dept.of Electric Electronics Computer Engineering, Sungkyunkwan University) ;
  • Yun, Seon-Pil (Dept.of Electric Electronics Computer Engineering, Sungkyunkwan University) ;
  • Yang, Seong-U (Dept.of Electric Electronics Computer Engineering, Sungkyunkwan University) ;
  • No, Yong-Han (Dept.of Electric Electronics Computer Engineering, Sungkyunkwan University)
  • 발행 : 2001.07.01
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초록

Si 과다 텅스텐 실리사이드를 초미세 MOS 소자의 대체 게이트 전극으로 제안하였다. SiO₂위에 텅스텐 실리사이드를 직접 증착하고 급속 열처리를 수행한 결과 낮은 저항을 얻고 불소(F) 확산 또한 무시할 수 있음을 확인하였다. 특히, 800 ℃, 진공 분위기에서 3분간 급속 열처리한 텅스텐 실리사이드의 경우 비저항이 ∼160 μΩ·cm이었고, 불소확산에 의한 산화막의 불균일한 성장도 발견할 수 없었다. 또한, WSix-SiO₂-Si (MOS) 캐패시터의 전기적 특성 분석 결과도 우수하였다.

We proposed Si-rich tungsten silicide (WSix) films for alternate gate electrode of deep-submicron MOSFETs. The investigation of WSix films deposited directly on SiO$_2$ indicated that the annealing of as-deposited films using a rapid thermal processor (RTP) results in low resitivity, as well as negligible fluorine (F) diffusion. Specifically, the resitivity of RTP-annealed samples at 800 $^{\circ}C$ for 3 minutes in vacuum was ~160 $\mu$$\Omega$ . cm, and the irregular growth of an extra SiO$_2$ layer due to F diffusion during annealing has not been observed. In addition, the analysis of the WSix-SiO$_2$-Si (MOS) capacitors exhibits excellent electrical characteristics.

키워드

참고문헌

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