Korean Journal of Crystallography (한국결정학회지)
- Volume 12 Issue 3
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- Pages.162-165
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- 2001
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- 1229-8700(pISSN)
Co-Silicide Device Characteristics in Embedded DRAM
- Kim, Jong-Chae (Department of Materials Engineering, Korea University of Technology and Education, Chungnam) ;
- Kim, Yeong-Cheol (Department of Materials Engineering, Korea University of Technology and Education, Chungnam) ;
- Kim, Byung-Kook (Division of Materials, Korea Institute of Science and Technology, Seoul)
- Published : 2001.09.01
Abstract
The EDL (Embedded DRAM and Logic) technologies with stack cell capacitors based on NO dielectric and Co-silicided source/drain junctions using a Ti capping material, were successfully implemented. The employed Co-silicided film exhibited junction leakage characteristics comparable to those of non-silicided junctions. Improved device characteristics without degradation of I/sub off/ was also achieved.
Keywords