Korean Journal of Crystallography (한국결정학회지)

Korean Crystallographic Association (한국결정학회)
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Co-Silicide Device Characteristics in Embedded DRAM

  • Kim, Jong-Chae (Department of Materials Engineering, Korea University of Technology and Education, Chungnam) ;
  • Kim, Yeong-Cheol (Department of Materials Engineering, Korea University of Technology and Education, Chungnam) ;
  • Kim, Byung-Kook (Division of Materials, Korea Institute of Science and Technology, Seoul)
  • Published : 2001.09.01
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Abstract

The EDL (Embedded DRAM and Logic) technologies with stack cell capacitors based on NO dielectric and Co-silicided source/drain junctions using a Ti capping material, were successfully implemented. The employed Co-silicided film exhibited junction leakage characteristics comparable to those of non-silicided junctions. Improved device characteristics without degradation of I/sub off/ was also achieved.

Keywords