Properties of YBCO Step-edge Junction Fabricated on Different Crystal Orientation of Sapphire Substrate

사파이어 기판의 다른 결정방향 위에 제작된 YBCO step-edge 접합의 특성

  • H. R. Lim (Korea Research Institute of Standards and Sciences, Superconductivity Group) ;
  • I-S Kim (Korea Research Institute of Standards and Sciences, Superconductivity Group) ;
  • Y. K. Park (Korea Research Institute of Standards and Sciences, Superconductivity Group) ;
  • J. C. Park (Korea Research Institute of Standards and Sciences, Superconductivity Group)
  • 임해용 (한국표준과학연구원 초전도그룹) ;
  • 김인선 (한국표준과학연구원 초전도그룹) ;
  • 박용기 (한국표준과학연구원 초전도그룹) ;
  • 박종철 (한국표준과학연구원 초전도그룹)
  • Published : 2001.01.01

Abstract

We have studied properties of step-edge Junction prepared with crystal orientation of sapphire substrate. The Step on sapphire substrates fabricated by conventional photolithography method and Ar ion milling method. $CeO_2$ buffer layer and in-situ YBCO thin film were deposited on the stepped sapphire substrates by a pulsed laser deposition method with the predetermined optimized condition. The step angle was centre fled low angle of about $25^{\circ}$. The YBCO film thickness was varied to obtain various thickness ratios of the film to the step height in a range from 0.7 to 1.2. I-V curves of junction were showed RSJ-behavior, double junction structure, and hysteresis due to the crystal orientation of substrate.

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