한국전기전자재료학회논문지 (Journal of the Korean Institute of Electrical and Electronic Material Engineers)

  • 제14권10호
  • /
  • Pages.802-807
  • /
  • 2001
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  • 1226-7945(pISSN)
  • /
  • 2288-3258(eISSN)
한국전기전자재료학회 (The Korean Institute of Electrical and Electronic Material Engineers)
권호 표지

열처리온도에 따른 $(Sr_{0.85}Ca_{0.15})TiO_3$박막의 구조 및 특성

Microstructure and Properties of $(Sr_{0.85}Ca_{0.15})TiO_3$ Thin Film with Annealing Temperature

  • 김진사 (광운대학교 전기공학과) ;
  • 조춘남 (광운대학교 전기공학과) ;
  • 신철기 (광운대학교 전기공학과) ;
  • 최운식 (대불대학교 전기공학과) ;
  • 김충혁 (광운대학교 전기공학과) ;
  • 이준웅 (한국전기전자재료학회 상임명예회장)
  • 발행 : 2001.10.01
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초록

The (S $r_{0.85}$C $a_{0.15}$)Ti $O_{3}$(SCT) thin films are deposited on Pt-coated electrode (Pt/TiN/ $SiO_2$/Si) using RF sputtering method. The composition of SCT thin films deposited on Si substrate at woom temperature is close to stoichiometry(1.102 in A/B ratio). The maximum dielectric constant of SCT thin films is obtained by annealing at 600[$^{\circ}C$]. The capacitance characteristics had a stable value within $\pm$4[%]. The drastic decrease of dielectric constant and increase of dielectric loss in SCT thin films is observed above 200[kHz]. SCT thin films used in this study show the phenomena of dielectric relaxation with the increase of frequencey.cey.

키워드

참고문헌

  1. J. Am. Ceram. Soc. v.65 no.11 Dielectric Properties of Ceramics in the system $(Sr_{0.5}Pb_{0.25}Ca_{0.25})TiO_3-Bi_2O_3TiO_2$ and Their Applications in a High-Voltage Capacitor SUSUMU NISHIGAKI;KANJI MURANO;AKIO OHKOSHI
  2. J. Vac. Sci.&Technol. v.20 no.3 Internal Stresses in Cr, Mo, Ta, and Pt Films Deposited by Sputtering from a Planar Magnetron Sources D. W. Hoffman;J. A. Thorton
  3. J. Appl. Phys. v.66 no.12 Preparation of epitaxial ABO₃Perovskite-type Oxide Thin Films on a(100) MgAl₂O₄/Si Substrate S. Matsubara;S. Miura;Y. Miyasaka;N. Shohata
  4. Thin Solid Films v.176 Tantalum Oxide Films for Monolithic capacitor Application Mustafa A. Mohammed;D. Vernon Morgan
  5. MRS Symposium Proceeding v.200 Stresses in Ferroelectric Thin Films S. B. Desu
  6. Thin Solid Films v.169 Growth of BaTiO₃-SrTiO₃Thin films by RF Magnetron Sputtering K. Fujimoto;Y. Kobaashi;K. Kubata
  7. J. Am. Cerm. Soc. v.30 no.4 Properties of Barium-Strontium Titanate Dielectric E.N.Bunting;G.R.Shelton;A.S.Creamer
  8. J. Phys. Chem. Solids v.11 Dielectric Properties of Single Crystals of SrTiO₃at Low Temperatures H. E. Weaver
  9. ニユケラス⑦ 半導體 セラミクスと その 應用 ニュ-ケラスシリ-ス 編集委員會(編)
  10. Ceramic Dielectrics and Capacitors J. M. Herbert
  11. Advances in Ceramics v.1 Two-Layer Model Explaining the Properties of SrTiO₃Boundary Layer Capacitor R. Wernicke;L. M. Levinson(ed.);D. C. Hill(ed.)
  12. Fiz. Tverd. Teia. v.34 Dielectric Properties of Strontium Bismuth Titanates at Low Temperature A. N. Gubkin;A. J. Kashtanova;G. I. Skanavi
  13. Rev. Elect. Commun. Lab. v.19 Classification and Dielectrics of the Boundary Layer Ceramic Dielectrics Shigeru waku(et al.)
  14. J. Appl. Phys. v.41 Dielectric Relaxation in Strontium Titanates Containing Rare-Earth Lons W. Johnson;L. E. Cross;F. A. Hummel