Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Magnetroresistance Effect of $Fe/CeO_{2}Fe_{75}Co_{25}$ Tunnel Junctions

$Fe/CeO_{2}Fe_{75}Co_{25}$ 터널접합의 잔기저항효과

  • Published : 2001.08.01
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Abstract

A series of Fe/CeO$_2$/Fe$_{75}$Co$_{25}$ tunnel junctions (Magnetic Tunnel Junction, MTJ) having CeO$_2$ barrier layers from 30 to 90$\AA$ in thickness were prepared by ion beam sputtering (IBS) method. In order to compare the properties of MTJs, Fe/Al oxide/Fe-Co tunnel junctions were also prepared. Some junctions with a CeO$_2$ barrier layer showed the ferromagnetic tunneling effect and the highest MR ratio at room temperature was 5%. The electric resistance of junctions with a CeO$_2$ barrier layer was higher that that of junctions with an Al oxide barrier. On the other hand, The interface analysis of the Fe/CeO$_2$ bilayer was conducted by means of X-ray photoelectron spectroscopy (XPS). It was found that CeO$_2$ was decomposed to Ce and $O_2$ during sputtering, and Fe was oxidized with these decomposed $O_2$ molecules. The reduction of both electric resistance and MR ratio may be associated with the decomposed Ce in the barrier layer.r.r.

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