유도결합 플라즈마에 의해 식각된 PZT 박막의 식각 Damage 개선

Recovery of Etching Damage of Etched PZT Thin Film by Inductively Coupled Plasma

  • 강명구 (중앙대학교 전자전기공학부) ;
  • 김경태 (중앙대학교 전자전기공학부) ;
  • 김창일 (중앙대학교 전자전기공학부)
  • 발행 : 2001.07.01

초록

In this work, the recovery of etching damage in the etched PZT thin film with $O_2$ annealing has been studied. The PZT thin films were etched as a function of Cl$_2$/Ar and additive CF$_4$ into Cl$_2$(80%) /Ar(20%). the etch rates of PZT thin films were 1600$\AA$/min at Cl$_2$(80%)/Ar(20%) and 1970 $\AA$/min at 30% additive Cf$_4$ into Cl$_2$(80%)/Ar(20%). In order to recover the characteristics of etched PZT thin films, the etched PZT thin films were annealed in $O_2$ atmosphere at various temperatures. From the hysteresis curves, ferroelectrical properties are improved by $O_2$ annealing process. The improvement of ferroelectric behavior is consistent with the increase of the (100) and (200) PZT phase revealed by x-ray diffraction (XRD). From x-ray photoelectron spectroscopy (XPS) analysis, intensities of Pb-O, Zr-O and Ti-O peak increase and the chemical residue peak is reduced by $O_2$ annealing. From the atomic force microscopy (AFM) images. it shows that the surface morphology of re-annealed PZT thin films after etching is improved.

키워드

참고문헌

  1. Proc. IEEE International Symposium on Multiple-Valued Logic Multiple-valued content-addressable memory using metal-ferroelectric-semiconductor FETs T. Hanyu;H. Kimura;M. Kameyama
  2. 전기전자재료 v.13 no.4 강유전체 및 전극 재료의 식각 기술 동향 김창일;김동표;민병준
  3. 전기전자재료학회논문지 v.13 no.3 고밀고 플라즈마에 의한 PZT 박막의 식각특성 연구 안태현;서용진;김창일;장의구
  4. 전기전자재료학회지 v.7 no.5 Sol-gel법과 급속 열처리에 의한 PZT 강유전 박막의 제작과 그 특성 백동수;최형욱;김준한;신현용;김규수;박창엽
  5. J. Vac. Sci. Technol. v.A18 Effects of BCI₃addition on Ar/Cl₂gas in inductively coupled plasmas for lead zriconate titanate etching T. H. An;J. Y. Park;G. Y. Yeom;E. G. Chang;C. I. Kim
  6. 한국전기전자재료학회 2000년도 추계학술대회 논문집 v.13 no.1 고밀도 플라즈마에 의한 BST 박막의 damage에 관한 연구 최성기;김창일;장의구;서용진;이우선
  7. Jpn. J. Appl. Phys. v.40 Dry Etching Characteristics of Pb(Zr,Ti)O₃Films in CF₄and Cl₂/ CF₄Inductively Coupled Plasmas J. K. Jung;W. J. Lee
  8. Thin Solid Films v.338 Effects of annealing conditions on the leakage current characteristics of ferroelectric PZT thin films grown by sol-gel process S. M. Cho;D. Y. Jeon
  9. J. Vac. Sci. Technol. v.A 13 no.4 Crystallixation of Pb(Zr,Ti)O₃films prepared by radio frequency magnetron sputtering With a stoichiometric oxide target N. A. Basit;H. K. Kim
  10. Handbook of X-ray Photoelectron Spectroscopy J. Chasstain