Electrical Properties of PbS-CuS Thin Films Prepared by Chemical Bath Deposition

CBD 방법에 의한 PbS-CuS 박막의 전기적 특성

  • 정수태 (부경대학교 공과대학교 전자공학과) ;
  • 조종래 (부경대학교 공과대학교 전자공학과) ;
  • 조정호 (부경대학교 공과대학교 전자공학과) ;
  • 정재훈 (부경대학교 공과대학교 전자공학과) ;
  • 김강언 (부경대학교 공과대학교 전자공학과) ;
  • 조상희 (경북대학교 무기재료공학과)
  • Published : 2001.05.01

Abstract

PbS, CuS and (Pb,Cu)S thin films were chemically deposited on glass from alkaline baths containing lead acetate, copper chloride, thiourea and triethanolamine. The deposition, optical, resistivity and thermal electric properties of these films were studied. PbS thin films showed a hexagonal structure and CuS thin films showed amorphous. The crystalline of (Pb,Cu)S thin films was obtained by heat treatment at 200$\^{C}$ and the deposition ratio of Pb to Cu showed 7:3. The energy gap of PbS, CuS and (Pb,Cu)S thin films were 1.7, 2.1 and 2.4 eV, respectively. Sheet resistance of PbS thin films was less affected on thermal annealing, but hose of (Pb,Cu)S and CuS thin films were more reduced about 3 orders of magnitude. All of those thin films indicated p type semiconductor in temperature ranging 30$\^{C}$ to 150$\^{C}$.

Keywords

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