Research on the optimization of off-axis illumination condition and sub-resolution pattern size for the $0.1{\mu}m$ rule dense pattern formation

$0.1{\mu}m$급 dense 패턴 형성을 위한 사입사 조명 조건과 OPC 보조 패턴 크기의 최적 조건에 관한 연구

  • Published : 2001.06.01

Abstract

In this paper, we have researched the depth of focus (DOF) and cutoff intensity of the $0.1{\mu}m$rule dense line'||'&'||'space pattern according to the various off-axis illumination (OAl) conditions in the optical system of 0.65 NA using ArF excimer laser (193 nm). We have also studied the variation of the DOF and cutoff intensity according to the sub-resolution pattern (hammer head type) size for optical proximity correction (OPC) applied to the capacitor pattern and the various OAl conditions in the same optical system. As a result, it is revealed that the cross type quadrupole or annular illumination is preferred to the conventional X type quadrupole for printing the $0.1{\mu}m$ rule dense pattern. Also, we can investigate the optimal illumination condition and the size of ope sub-resolution pattern to keep a consistent DGF and cutoff intensity trends.

본 연구에서는 193nm의 ArF excimer laser 광원과 0.65의 NA를 갖는 광학계에서 기본 선폭이 $0.1{\mu}m$이고 duty ratio 가 1:1인 dense line & space(LS) 패턴에 대하여 여러사입사 조명 조건에 따른 초점심도(Depth of Focus; DOF)와 cutoff intensity를 확인하고 기본 capacitor 패턴에서 광학적 근접효과 보정을 위한 hammer head형 보조 패턴의 크기와 여러사입사 조건에 다른 DOF와 cutoff intensity의 변화에 대하여 알아보았다. 그결과 0.1$\mu$m급의 dense 패턴 구현을 위해서는 전형적인 X자형 사구 조명보다는 십자(+)형 사구 조명이나 환형조명이 보다 효과적인 것을 알수 있었다. 이와 더불어 보조 패턴의 크기가 약간 변한다 하더라도 일정한 초점심도와 cutoff intensity를 유지하는 경향을 보이는 특정한 조명 조건이 존재함을 밝히고 그에 따라 최적의 조명 조건과 보조 패턴의 크기에 대하여 알아보았다.

Keywords

References

  1. Jpn. J. Appl. Phys. v.30 no.11B Photolithography system using annular illumination K. Kamon;T. Miyamoto;Y. Myoi;H. Nagata;M. Tanaka;K. Horie
  2. 한국광학회지 v.10 no.6 패턴 분해능 및 초점심도 향상에 대한 시입사 조명(Off-Axis Illumination)의 효과에 관한 연구 박정보;이성묵
  3. IEEE Trans. Electron Devices v.ED-29 Improving resolution in photolithography with a phase-Shifting Mask M. D. Levenson;N. S. Viswanathan;R. A. Simpson
  4. Optical Microlithography X;Proc. SPIE v.3051 Practical method for full-chip optical proximity J. F. Chen;T. Laidig;K. E. Wampler;R. Caldwell;G. E. Fuller (ed.)
  5. Optical/Laser Microlithography Ⅶ;Proc. SPIE v.2197 Automated optical proximity correction: a rules-based approach O. Otto;J. Garafalo;K. Low;C. Yuan;R. Henderson;C. Pierrat;R. Kostelak;S. Vaidya;P. Vasudev;T. A. Brunner(ed.)
  6. Optical Microlithography X;Proc. SPIE v.3051 Spatial filter models to describe IC lithographic behavior J. Stirniman;M. Rieger;G. E. Fuller(ed.)
  7. J. Vac. Sci. Technol. B v.17 no.3 Spatial frequency analysis of optical lithography resolution enhancement techniques S. R. J. Brueck;X. Chen
  8. Jpn. J. Appl. Phys. v.33 The Exposure-Defocus Forest B. J. Lin
  9. Optical Microlithography X;Proc. SPIE v.3051 Practical method for full-chip optical proximity J. F. Chen;T. Laidig;K. E. Wampler;R. Caldwell;G. E. Fuller(ed.)
  10. J. Vac. Sci. Technol. B v.15 no.6 Optical proximity correction for intermediate-pitch features using sub-resolution scattering bars J. F. Chen;T. Laiding;K. E. Wampler;R. Caldwell
  11. Optical Microlithography ⅩⅠ;Proc. SPIE v.3334 Process proximity correction using an automated software tool W. Maurer;C. Dolainsky;J. Thiele;C. Friedrich;P. Karakapsanis;L. van den Hove(ed.)
  12. Optical Microlithography ⅩⅠ; Proc. SPIE v.3334 Illumination pupil filtering using modified quadrupole apertures B. W. Smith;L. Zavyalova;J. S. Petersen;L. van den Hove(ed.)
  13. J. Vac. Sci. Technol. B v.17 no.3 Experimental comparison of off-axis illumination and imaging interferometric lithography X. Chen;S. R. J. Brueck
  14. Jpn, J. Appl. Phys. v.38 no.12B Imaging characteristics of 0.12㎛ dynamic random access memory pattern by KrF excimer laser lithography S. Nakao;K. Tsujita;I. Arimoto;W. Wakamiya
  15. Optical Microlithography ⅩⅠ;Proc. SPIE v.3334 Lithographic effect of mask critical dimension error A. K. Wong;R. A. Ferguson;L. W. Liebmann;S. M. Manfield;A. F. Molless;M. O. Neisser;L. van den Hove(ed.)
  16. Optical Microlithography ⅩⅡ;Proc. SPIE v.3679 The mask error factor: causes and implications for process latitude J. V. Schoot;J. Finders;K. V.I. Schenau;M. Klaassen;C. Buijk;L. van den Hove(ed.)