한국응용과학기술학회지 (Journal of the Korean Applied Science and Technology)
- 제17권3호
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- Pages.188-191
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- 2000
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- 1225-9098(pISSN)
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- 2288-1069(eISSN)
DOI QR Code
Deep UV Photoresists;Dissolution Inhibitor
- Shim, Sang-Yeon (Department of Industrial Chemistry, Kangnung National University) ;
- Crivello, James V. (Department of Chemistry, Rensselaer Polytechnic Institute)
- 발행 : 2000.09.30
초록
A new class of deep UV Photoresist based on the principles of chemical amplification was developed. This photoresist consists of three basic elements: a copolymer, blocked tetrabromobisphenol-A as a dissolution inhibitor and a photosensitive onium salt as a photoacid generator. On irradiation followed by a post exposure bake, tert-butoxycarbonyloxy phenyl group is converted to phenol group. Thus the initially base insoluble resin is converted under UV irradiation to a base soluble resin which may be preferentially removed by dissolution. This new photoresist display high sensitivity, 10
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