Numerical Simulation on Buffering Effects of Ultrathin p-${\mu}c$-Si:H Inserted at the p-a-SiC:H/i-a-Si:H Interface of Amorphous Silicon Solar Cells

비정질 실리콘 태양전지의 p-a-SiC:H/i-a-Si:H 계면에 삽입된 P형 미세 결정 실리콘의 완충층 효과에 대한 수치 해석

To get more insight into the buffering effects of the p-${\mu}c$-Si:H Inserted at the p-a-SiC:H/i-a-Si:H interface, we present a systematic numerical simulation using Gummel-Schafetter method. The reduced recombination loss at the p/i interface due to a constant bandgap buffer is analysed in terms of the variation of the p/i Interface region with a short lifetime and the characterisitics of the buffer such as mobility bandgap, acceptor concentration, and D-state density. The numerical modeling on the constant bandgap buffer demonstrates clearly that the buffering effects of the thin p-${\mu}c$-Si:H originate from the shrinkage of highly defective region with a short lifetime in the vicinity of the p/i interface.