대한전자공학회논문지SD (Journal of the Institute of Electronics Engineers of Korea SD)

대한전자공학회 (The Institute of Electronics and Information Engineers)
권호 표지

기가 비트급 소자 제작을 위한 3차원 몬테카를로 극 저 에너지 이온 주입 모델링

Modeling of 3D Monte Carlo Ion Implantation in the Ultra-Low Energy for the Fabrication of Giga-Bit Devices

  • 반용찬 ((주)실리콘테크 부설연구소) ;
  • 권오섭 (仁荷大學校 電子電氣컴퓨터工學部) ;
  • 원태영 (仁荷大學校 電子電氣컴퓨터工學部)
  • 발행 : 2000.10.01
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초록

소자의 크기가 딥 서브 마이크론 이하로 작아짐에 따라 극 저 에너지 이온 주입의 정확한 모델링은 중요함을 더하게 되었다. 본 논문에서는 이체 충돌 근사(Binary Collision Approximation)에 기반을 둔 3차원 몬테카를로 이온 주입 시뮬레이터를 개발하였다. 이를 위하여, 저 에너지 이온 주입에 있어 이체 충동 근사 방법의 제한 요소인 전자 에너지 정지력에 대한 모델을 개선하였고, 다중 충돌 계산을 위한 모델을 적용하였다. 계산된 이온 주입 도펀트 분포 및 결함 분포는 실제 실험치와 일치함을 확인하였다. 또한, 3차원 이온 주입 시뮬레이션에 있어 계산 시간의 효율을 극대화 하고자, 본 연구에서는 이온 분포 복사법(Ion Distribution Replica Method)을 개발하였고, 복잡한 토폴로지를 갖는 다층 에이어의 이온 주입 공정에 있어 빠른 수행 시간 및 결과의 정확성을 확인하였다.

A rigorous modeling of ultra-low energy implantation is becoming increasingly more important as devices shrink to deep submicron dimensions. In this paper, we have developed an efficient three-dimensional Monte Carlo ion implantation model based on a modified Binary Collision Approximation(BCA). To this purpose, the modified electronic stopping model and the multi-body collision model have been taken into account in this simulator. The dopant and damage profiles show very good agreement with SIMS(Secondary Ion Mass Spectroscopy) data and RBS(Rutherford Backscattering Spectroscopy) data, respectively. Moreover, the ion distribution replica method has been implemented into the model to get a computational efficiency in a 3D simulation, and we have calculated the 3D Monte Carlo simulation into the topographically complex structure.

키워드

참고문헌

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