대한전자공학회논문지SD (Journal of the Institute of Electronics Engineers of Korea SD)

대한전자공학회 (The Institute of Electronics and Information Engineers)
권호 표지

다중양자우물의 상호 섞임 현상을 이용한 다중파장검출기의 제작

Fabrication of Wavelength Division Demultiplexing Photodetectors Using Quantum Well Intermixing

  • 여덕호 (서울大學校 電氣工學部) ;
  • 윤경훈 (서울大學校 電氣工學部) ;
  • 김성준 (서울大學校 電氣工學部)
  • Yeo, Deok-Ho (School of Electrical Engineering of Seoul National University) ;
  • Yoon, Kyung-Hun (School of Electrical Engineering of Seoul National University) ;
  • Kim Sung-June (School of Electrical Engineering of Seoul National University)
  • 발행 : 2000.09.01
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초록

InGAAs/InGaAsP 다중양자우물구조에 분순물없는 vacancy 확산으로 지역 선택적인 상호 섞임 현상을 유도하고, 다중 파장 검출이 가능한 집적 광도파로형 photodetector를 제작 및 측정하였다. 다중양자우물구조는 상호섞임에 의해서 밴드갭이 크게 청색편이 하였다. 집적 광수신소자는 p-i-n 구조이며, 밴드갭이 큰 영역과 작은 영역이 광도파로를 따라 일렬이 되도록 항ㅆ다. 광도파로의 폭은 20 ${\mu}m$이며, 각 광수신소자에 길이는 250 ${\mu}m$이다. Tunable 레이저와 편광기를 이용하여, TE/TM 편광된 빛을 광수신소자에 butt-coupling 방법으로 입사하여 소자의 파장 특성을 측정하였다. 제작된 소자는 1480 nm 와 1550 nm 파장 영역을 분리, 수광할 수 있음을 보였다.

Utilizing impurity free vacancy diffusion (IFVD) method, area selective intermixing of InGaAs/InGaAsP multi-quantum well (MQW) structure was done. After this, wavelength division demultiplexing waveguide type photodetectoers was integrated and measured. It showed large blue shift in bandgap due to intermixing of MQW. Photodetectors are based on typical p-i-n structure and devices having large and small bandgap areas line up linearly. Width of waveguide and length of each photodetector are 20 and 250 ${\mu}m$, respectively, TE/TM polarized light from tunable laser was butt-coupled to the photodetector and spectral response was measured. Photodetectors can demultiplexing 1480 and 1550 nm wavelength.

키워드

참고문헌

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