Highly transparent Pt ohmic contact to InGaN / GaN blue light - emitting diodes

  • Huh, Chul (Department of Materials Science and Engineering, and Center for Optolectronic Materials Research, Kwangju Institute of Science and Technology(K-JIST)) ;
  • Kim, Hyun-Soo (Department of Materials Science and Engineering, and Center for Optolectronic Materials Research, Kwangju Institute of Science and Technology(K-JistK)) ;
  • Kim, Sang-Woo (Department of Materials Science and Engineering, and Center for Optolectronic Materials Research, Kwangju Institute of Science and Technology(K-JIST)) ;
  • Lee, Ji-Myon (Department of Materials Science and Engineering, and Center for Optolectronic Materials Research, Kwangju Institute of Science and Technology(K-JIST)) ;
  • Kim, Dong-Joon (Department of Materials Science and Engineering, and Center for Optolectronic Materials Research, Kwangju Institute of Science and Technology(K-JIST)) ;
  • Kim, Hyun-Min (Department of Materials Science and Engineering, and Center for Optolectronic Materials Research, Kwangju Institute of Science and Technology(K-JIST)) ;
  • Park, Seong-Ju (Department of Materials Science and Engineering, and Center for Optolectronic Materials Research, Kwangju Institute of Science and Technology(K-JIST))
  • Published : 2000.10.01

Abstract

We reprot on the fabrication and characterization of InGaN/GaN multiple quantum well light-emitting diode (LED) with a highly transparent Pt ohmic contact as a current spreading layer. The value of light transmittance of a Pt thin film with a thickness of 8 nm on-GaN was measured to be 85% at 450 nm. The peak wavelength and the full-width at half-maximum (FWHM) of the emission spectrum of the LED at 20 mA were 453 nm and 23 nm, respectively. Pt-contacted LEDs show good electrical properties and high light-output efficiency compared to Ni/Au-contacted ones. These results suggest that a Pt thin film can be used as an effective current spreading layer with high light-transparency.

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