Journal of Korean Vacuum Science & Technology

한국진공학회 (The Korean Vacuum Society)
권호 표지

Free exciton transitions and Varshni′s coeffecients for GaN epitaxial layers grown by horizontal LP - MOCVD

  • Lee, Joo-in (Nano surface Group, Korea Research Institute of Standards and Science) ;
  • Leem, Jae-Young (Nano surface Group, Korea Research Institute of Standards and Science) ;
  • Son, J.S. (School of Architecture, Environment and LIfe Science, Kyungwoon University) ;
  • Viswanath, A. Kasi (C-MET Panchawati)
  • 발행 : 2000.10.01
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초록

We have studied the photoluminescence properties of undoped epitaxial layers of GaN on sapphire substrate grown by horizontal low pressure metal organic chemical vapor deposition method in the temperature range of 9-300 K. At 9 K the spectra are dominated by the well resolved interband free excitons A and B as well as bound excitons. Temperature dependence of free exciton transitions was studied and Varshni's coefficients for the temperature variation of bandgap were determined.

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