Journal of Korean Vacuum Science & Technology

The Korean Vacuum Society (한국진공학회)
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Free exciton transitions and Varshni′s coeffecients for GaN epitaxial layers grown by horizontal LP - MOCVD

  • Lee, Joo-in (Nano surface Group, Korea Research Institute of Standards and Science) ;
  • Leem, Jae-Young (Nano surface Group, Korea Research Institute of Standards and Science) ;
  • Son, J.S. (School of Architecture, Environment and LIfe Science, Kyungwoon University) ;
  • Viswanath, A. Kasi (C-MET Panchawati)
  • Published : 2000.10.01
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Abstract

We have studied the photoluminescence properties of undoped epitaxial layers of GaN on sapphire substrate grown by horizontal low pressure metal organic chemical vapor deposition method in the temperature range of 9-300 K. At 9 K the spectra are dominated by the well resolved interband free excitons A and B as well as bound excitons. Temperature dependence of free exciton transitions was studied and Varshni's coefficients for the temperature variation of bandgap were determined.

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