Journal of the Korean Society for Precision Engineering (한국정밀공학회지)

Korean Society for Precision Engineering (한국정밀공학회)
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Study on Pad Properties as Polishing Result Affecting Factors in Chemical Mechanical Polishing

CMP공정에서 연마결과에 영향을 미치는 패드 물성치에 관한 연구

  • 김형재 (부산대학교 대학원 정밀기계공학과) ;
  • 김호윤 (부산대학교 대학원 정밀기계공학) ;
  • 정해도 (부산대학교 기계공학부)
  • Published : 2000.03.01
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Abstract

Properties of pad are investigated to find the relationship between the chemical mechanical polishing(CMP) results, such as material removal rate and within wafer non-uniformity(WIWNU), and its properties. Polishing pressure is considered as important factors to affect the results, so behavior of ordinary polymer is studied to define the polishing result affecting properties of pad. Experimental setup is devised to identify the behavior of pad and several different pads are used in chemical mechanical polishing experiments to verify the correlations between pad properties and polishing results. The results indicate that the viscoelastic properties of pad had relationships with the polishing results, and shows correlation between suggested properties of pad and polishing result.

Keywords

References

  1. 정해도, 차세대 반도체 제조를 위한 초정밀 가공기술, 대한기계학회지, Vool. 36, No. 3, p. 221, 1996
  2. D.Pramanik, M.Weling, X.W. Lin, 'CMP Applications for Sub $0.25{\mu}m$ Process Technologies,' ECS. Proceedings, PV98-7, pp. 1-8, 1998
  3. P.Singer, 'The Feture Interconnects,' Semicondutor International, Vol. 6, pp. 90-98, 1998
  4. D.Wang,'Von Mises Stress in Chemical-Mechanical Polishing Process,' J. Electrochem. Soc., Vol. 144, No. 3, pp. 1121, March, 1997
  5. 小川正裕, CMP機にあけるウェハ土面壓分布の計算,' 精密工學會 春李大會論文集, p. 135, 1999
  6. 久保直人ら, '硏曆布の經時變化と硏曆特性の相關について,' 精密工學會誌, p. 219, Vol. 65, No. 2, 1995
  7. J.M.Steigwald, 'Chemical Mechanical Planarization of Microelectronic Materials,' John Wiley & Sons, New York, pp. 66-84, 1997
  8. S.R.Runnels, L.M.Eyman, 'Tribology Analysis of Chemical Mechanical Polishing,' J. Electrochem. Soc., Vol. 141, No. 6, pp. 1698-1701, June, 1994 https://doi.org/10.1149/1.2054985
  9. S.Sundarajan, et al., 'Two-Dimensional Wafer-Scale Chemical Mechanical Planarization Models Based on Lubrication Theory and Mass Transport,' J. Electrochem. Soc., Vol. 146, No. 2, pp. 761-766, 1999 https://doi.org/10.1149/1.1391678
  10. M.Tomozawa, 'Oxide CMP mechanisms,' Solid State Technology, p. 171, July, 1997
  11. A.R.Baker, 'The Origin of the Edge Effect in CMP,' ECS Proceedings, Vol. 96-22, pp. 228-238, 1996
  12. C.W.Liu et al, 'Modeling of the Wear Mechanism during Chemcal-Mechanical Polishing,' J. Electrochem. Soc., Vol. 143, No. 2, pp. 716-721, 1996 https://doi.org/10.1149/1.1836507
  13. 맹기석 외, 현대 고분자화학, pp. 257-263, 형설출판사, 1986
  14. Wilhelm Flugge, 'Viscoelasticity-chap1 Viscoelastic Models,' pp.4-32, Springer-Verlag, Berlin, 1975
  15. Peter Powell, 'Engineering with Polymers,' pp. 89-95, Champman and Hall, New York, 1983
  16. 이성훈, 김형재, 정해도, 화학기계적연마(CMP) 컨디셔닝에 관한 연구, 한국정밀공학회지, 제16권 5호, pp. 40-47, 1999