Enhancement of the nucleation density for diamond film on the pretreated glass substrate by the application of cyclic modulation of the source-gas flow rate

For the enhancement of the nucleation density of the diamond film, we introduced the cyclic process. The cyclic process was carried out by the on/off control of CH$_4$ flow rate for a relatively short time (10 min), compared with the total reaction time (6 h). Prior to depositing the diamond film, we made the pretreated glass substrate via the unidirectional scratch using ∼l $\mu\textrm{m}$ size diamond powders. Diamond films were deposited on the pretreated glass substrate in a microwave plasma enhanced chemical vapor deposition (MPECVD) system. We observed the enhancement of the nucleation density of the diamond films caused by the cyclic process. Detailed surface morphologies of the substrate were investigated after the cyclic process. Based on these results, we discussed the cause for the enhancement of the nucleation density on the pretreated glass substrate by the cyclic process.