대한전자공학회논문지SD (Journal of the Institute of Electronics Engineers of Korea SD)

대한전자공학회 (The Institute of Electronics and Information Engineers)
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10Gb/s 광수신기용 초고속 저잡음 MMIC 전치증폭기 설계 및 제작

Design and Fabrication of Ultra-High-Speed Low-Noise MMIC Preamplifier for a 10Gbps Optical Receiver

  • 양광진 (삼성전자 정보통신총괄 통신연구소) ;
  • 백정기 (충남대학교 전파공학과) ;
  • 홍선의 (한국전자통신연구소 화합물반도체연구부) ;
  • 이진희 (한국전자통신연구소 화합물반도체연구부) ;
  • 윤정섭 (한국전자통신연구소 화합물반도체연구부) ;
  • 맹성재 (한국전자통신연구소 화합물반도체연구부)
  • 발행 : 2000.03.01
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초록

본 논문에서는 AlGaAs/lnGaAs/GaAs P-HEMT 소자를 이용한 10 Gb/s 광수신기용 MMIC 초고속 저잡음 전치증폭기를 설계, 제작하고 특성을 분석 하였다. T 형태의 0.15㎛ 게이트 길이를 갖는 P-HEMT 소자를 이용하여 3단 트랜스임피던스 구조로 회로를 설계하였으며 광대역 특성을 얻기 위하여 피킹인덕터를 사용하였고, 저잡음특성을 위하여 게이트폭을 최적화하였다. 제작된 전치증폭기는 트랜스임피던스 이득 60㏈Ω, 대역폭 9.15 ㎓, 잡음지수가 3.9 ㏈ 이하인 특성을 보였다.

This paper describes design, fabrication, and performance of an ultra-high-speed and low-noise MMIC (Monolithic Microwave Integrated Circuit) preamplifier for a 10 Gb/s optical receiver. The transimpedance type 3-stage MMIC preamplifier for ultra-high-speed and low-noise was designed using an AlGaAs/InGaAs/GaAs P-HEMTs(Pseudomorphic High Electron Mobility Transistors) with 0.15${\mu}{\textrm}{m}$ length T-shaped gate. To obtain broadband characteristics, we used the inductor peaking technique, and the gate width was optimized for low noise performance. Measurements reveal that the fabricated preamplifier has the high transimpedance gain of 60 ㏈Ω and 9.15 ㎓ bandwidth with the noise figure of less than 3.9 ㏈.

키워드

참고문헌

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