Transactions on Electrical and Electronic Materials
- Volume 1 Issue 2
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- Pages.1-6
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- 2000
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- 1229-7607(pISSN)
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- 2092-7592(eISSN)
A Study on Pumping Effect of Oxygen in Polysilicon Gate Etching
- Kim, Nam-Hoon (Department of Electrical Engineering, Chung-Ang Univ) ;
- Shin, Sung-Wook (Department of Electrical Engineering, Chung-Ang Univ) ;
- Bin, Shin-Seok (Department of Electrical Engineering, Chung-Ang Univ) ;
- Yu chang-Il kim (Department of Electrical Engineering, Chung-Ang Univ) ;
- Chang, Eui-Goo (Department of Electrical Engineering, Chung-Ang Univ)
- Published : 2000.06.01
Abstract
This article presents the experiments and considerations possible about gate etching in polysilicon when oxygen gas is added in chamber, We propose the novel study with optical emission spectroscopy in polysilicon etching. It is shown that added oxygen gases play an important role in enhencement of density in chlorine gases as a scavenger of silicon from SiCl