마그네트론 스퍼터링법을 이용한 Indium-Tin Oxide 박막의 제작과 그 특성에 관한 연구

A Study on the Fabrication and Characteristics of ITO Thin Film Deposited by Magnetron Sputtering Method

  • 발행 : 2000.11.01

초록

Indium-Tin Oxide (ITO) films were prepared on the commercial glass substrate by the Magnetron Sputtering method. The target was a 90wt.% $In_2O_3$-10wt.% $SnO_2$with 99.99% purity. The ITO films deposited by changing the partial pressure of oxygen gas ($O_2$/(Ar+$O_2$)) of 2, 3 and 5% as well as by changing the substrate temperature of $300^{\circ}C$ or $500^{\circ}C$. The influence of substrate pre-annealing and pre-cleaning on the quality of ITO film were examined, in which the substrate temperature was $500^{\circ}C$ and oxygen partial pressure was 3%. The characteristics of films were examined by the 4-point probe, Hall effect measurement system, SEM, AFM, Spectrophotometer, and X-ray diffraction. The optimum ITO films have been obtained when the substrate temperature is $500^{\circ}C$ and oxygen partial pressure is 3%. At optimum condition, the film showed transmittance of 81%, sheet resistivity of $226\Omegatextrm{cm}^2$, resistivity($\rho$) of $5.4\times10^{-3}\Omega$cm, carrier concentration of $1.0\times10^{19}cm^{-3}$, and carrier mobility of $150textrm{cm}^2$Vsec. From XRD spectrum, c(222) plane was dominant in the case of substrate temperature at $300^{\circ}C$, without regarding to oxygen partial pressure. However, in the case of substrate temperature at $500^{\circ}C$, c(400) plane was grown together with c(222) plane, only for oxygen partial pressure of 2 and 3%. In both case of chemical and ultrasonic cleaning without pre-annealing the substrate, it showed much almost same sheet resistivity, resistivity($\rho$), transmittance, carrier concentration, and carrier mobility. In case of $500^{\circ}C$/60min pre-annealing before ITO film deposited, both transimittance and carrier mobility are better than no pre-annealing, because pre-annealing is supposed to remove alkari ions diffusion from substrate. ITO film deposited on the Corning 0080 sybstrate showed a little bit better sheet resistivity, resistivity($\rho$), transimittance, carrier concentration than the film deposited on commercial glass. But no differences between Corning substrate and pre-annealed commercial glass substrate are found.

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참고문헌

  1. Phys. Rev. v.93 E. Burstein
  2. J. Appl. Phys. v.33 R. L. Weiher
  3. J. Electronchem. Soc. v.119 D. B. Fraser;H. D. Cook
  4. J. Appl. Phys. v.54 N. Basu;A. K. Batabyal;A. K. Barua
  5. J. Electronchem. Soc. v.139 Ph. Parent;H. Dexpert;G. Tourillon
  6. J. Vac. Soci. Technol. A v.8 S. Ishibashi;Y. higushi;Y. Ota;K. Nakamura
  7. IEEE Electron lett v.26 T. J. Coutts;X. Li;M. W. Wanlass;K. A. Emery;T. A. Cessert
  8. J. Appl. Phys. v.53 H. Kenko;K. Miyake
  9. Thin Solid Films v.192 T. Nagatomo;Y. Maruta;O. Omoto
  10. J. Korea Physical Society v.10 S. H. Shin;H. H. Kim
  11. Thin Solid Films v.192 Takao Nagatomo;Yukihiro Maruta;Osamu Omoto
  12. Thin Solid Films v.224 W. K. Lee;T. Machino;T. Sugihara
  13. 육사논문집 v.54 K. H. Cho;Y. J. Kim