Excellent Crystallinity of Ba Ferrite Layers Deposited on Pt(111) Underlayers

  • Matsushita, Nobuhiro (Department of Physical Electronics, Tokyo Institute of Technology) ;
  • Feng, Jie (Department of Physical Electronics, Tokyo Institute of Technology) ;
  • Watanabe, Koh (Department of Physical Electronics, Tokyo Institute of Technology) ;
  • Ichinose, Makoto (Department of Physical Electronics, Tokyo Institute of Technology) ;
  • Nakagawa, Shigeki (Department of Physical Electronics, Tokyo Institute of Technology) ;
  • Naoe, Masahiko (Department of Physical Electronics, Tokyo Institute of Technology)
  • 발행 : 2000.09.01

초록

A magnetoplumbite type of Ba ferrite(BaM) layers were deposited on Pt(111) and Pt(200) layers, and their c-axis orientation and magnetic characteristics were compared each other. The as-deposited BaM layer on Pt(111) one at the substrate temperature $T_s$ above $500^{\circ}C$ revealed remarkable c-axis orientation. The saturation magnetization 4$\piM_s$ and the perpendicular coercivity $H_{c⊥}$ of the films as-deposited at $T_s$ of $600^{\circ}C$ were 4.0kG and 2.5kOe, respectively. On the other hand, BaM ferrite layer deposited on Pt(200) layer at $T_s$ as relatively low as $500^{\circ}C$ also revealed weak c-axis orientation as well as (107) one and the films as-deposited at $T_s$ of $600^{\circ}C$ exhibited 4$\piMs_{and}$ $H_{c⊥}$ of 2.8kG and 2.5kOe, respectively. It was suggested that although chemical activity of Pt surface was effective for the formation of BaM crystallites, the lattice matching was also important for obtaining BaM layer with good c-axis orientation and large perpendicular anisotropy.sotropy.

키워드

참고문헌

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