한국전기전자재료학회논문지 (Journal of the Korean Institute of Electrical and Electronic Material Engineers)
- 제13권8호
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- Pages.681-687
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- 2000
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- 1226-7945(pISSN)
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- 2288-3258(eISSN)
다충구조 InSb 홀소자의 제작과 특성
Magnetic Characteristics of an InSb Hall Device of Multilayerd Structure
초록
Magnetic Characteristics of an InSb hall device of multilayered structures were investigated. For the measurement of electrical properties of the hall device InSb thin films fabricated with series and parallel multilayers wee evaporated. Hall coefficient hall mobility carrier density and hall voltage were measured as a function of the intensity of magnetic field. We found that the XRD analysis of InSb thin film showed good properties at 20