참고문헌
- 消えないICメモリ-FRAMのすべて 川合 知二
- Integrated Ferroelectrics v.15 A Critical Comparative review of PZT and SBT-Based Science and Techology for Non-Volatile Ferroelectric Memories Orlando Auciello
- Jpn. J. Appl. Phys. v.32 Evaluation of imprint properties in Sol-Gel Ferroelectric Pb(Zr,Ti)O₃Thin-Film Capacitors T. Mihara;H. Watanabe;C. A. Paz de Araujo
- Jpn. J. Appl. Phys. v.34 Characteristic of Bismuth layered SrBi₂Ta₂O9 thin-film capacitors and comparison with Pb(Zr,Ti)O₃ T. Mihara;H. Yoshimori(et al.)
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Integrated Ferroelectrics
v.14
New Low Temperature Processing of Sol-Gel
$SrBi_2Ta_2O_9$ Thin Films Y. Ito;M. Ushikubo(et al.) - MRS Bulletin, Electroceramic Thin Films Part I Solution Deposition of Ferroelectric Thin Films B. A. Tuttle;R. W. Schwartz
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Appl. Phys. Lett.
v.68
Metalorganic Chemical Vapor Deposition of Ferroelectric
$SrBi_2Ta_2O_9$ Thin Film T. Li;Y. Zhu;S. B. Desu -
Appl. Phys. Lett.
v.67
Pulsed laser ablation synthesis and chaterization of layered
$Pt/SrBi_2Ta_2O_9/Pt$ ferroelectric capacitors with practically no polarization fatigue R. Dat;J. K. Lee -
Appl. Phys. Lett.
v.68
no.5
Metalorganic chemical vapor deposition of ferroelectric
$SrBi_2Ta_2O_9$ thin films T. Li;Y. Zhu;S. B. Desu -
Jpn. J. Appl. Phys.
v.37
Electrical Properties of
$Pt/SrBi_2Ta_2O_9/CeO_2/SiO_2/Si$ Structure for Nondestructive Readout Memory D. S. Shin;H. N. Lee(et al.) -
Jpn. J. Appl. Phys.
v.37
Effects of Morphological Changes of
$Pt/SrBi_2Ta_2O_9$ Interface on the Electrical Properties of Ferroelectric Capacitor D. S. Shin;H. N. Lee(et al.)