Effect of a Macroscopic Fluctuation in Pulling Rate on the Formation of OSF-ring Cz-Si SIngle Crystal

초크랄스키 실리콘 단결정에서 인상 속도의 거시적 변동이 OSF-링 형성에 미치는 영향

In a 200nm Cz-Si crystal, a macroscopic fluctuation in pulling rate was intentionally introduced an then the variations of the pulling rate and the position of OSF-ring were compared each other. The formation behavior of OSF-ring in the effective volume, defined as the region between the growth interface position -α and the growth interface position +α, is most affected by the pulling rate fluctuation. To understand the correct effect of a macroscopic pulling rate fluctuation, its cumulative effect in the effective volume should be considered. A new concept of modeling for it was proposed here.