References
- 대한민국 주파수 분배표 한국무선국관리사업단
- Proc of the IEEE v.80 no.4 Ultra-high speed modulation doped field effect transistors: A tutorial review L. D. Nguyen(et al.)
- Applied Phys. Lett. v.33 no.7 Electron mobilities in modulation doped semiconductor heterojunction superlattices R. Dingle(et al.)
- IEEE Trans. Electron Devices v.35 The role of inefficient charge modulation in limiting the current gain cutoff frequency of GaAs MODFET M. C. Foisy(et al.)
- IEEE Trans. Electron Devices v.ED-33 Characterization of InGaAs/AlGaAs pseudomorphic modulation doped field effect transistors A. Ketterson(et al.)
- IEEE Electron Devices Lett v.ED-7 Microwave performance of a quarter micrometer gate low noise pseudomorphic InGaAs/AlGaAs modulation doped field effect transistor T. Henderson(et al.)
-
Appl. Phys. Lett.
v.43
Measurement of conduction band discontinuity of molecular beam epitaxial growth
$In_{0.52}Al_{0.48}As/In_{0.53}Ga_{0.47}As$ heterojunction by C-V profiling R. People(et al.) - Electron Lett. v.24 no.6 0.1 um gatelength MODFETs with unity current gain cutoff frequency above 110 GHz A. N. Lepore(et al.)
- IEEE MTT-s int. Microwave Symp. Tech. Dig. Noise performance of microwave HEMT K. Joshin(et al.)
- IEEE MTT-s int. Microwave Symp. Tech. Dig. Low noise high electron mobility transistors J. J. Berenez(et al.)
- IEEE Electron Devices Lett. v.11 94GHz 0.1um T-gate low noise pseudomorphic InGaAs HEMT's K. L. Tan(et al.)
-
IEEE Trans. Electron Devices
v.12
60GHz pseudomorphic
$Al_{0.25}Ga_{0.75}As/In_{0.28}Ga_{0.72}As$ low noise HEMT's K. L. Tan(et al.) -
IEDM Tech Dig.
Novel high performance self-aligned of 0.1um gatelength
$Al_{0.48}In_{0.52}As-Ga_{0.38}In_{0.62}As$ pseudomorphic HEMT's U. K. Mishra(et al.) - J. Vac. Sci. Tech. v.B6 no.2 The impact of epritaxial layer design and quality on GaInAs/AlInAs high electron mobility transistor performance A. S. Brown(et al.)
- IEEE Electron Devices Lett. v.EDL-6 Power performance of microwave high electron mobility transistors P. M. Smith(et al.)
- IEEE Trans. Electron Devices v.ED-33 Microwave power double-heterojunction HEMT's K. Hokosaka(et al.)
- IEEE Trans. Microwave Theory Tech. v.44 Micromachined W-band filters S. V. Robertson(et al.)
- IEEE Electron Devices Lett. v.EDL_7 High efficiency millimeter wave GaAs/AlGaAs power HEMTs P. Saunier(et al.)
- IEEE Electron Devices Lett. v.EDL-7 GaAs/AlGaAs heterojunction MISFETs having 1W/mm power density at 18.5GHz B. Kim(et al.)
- IEEE MTT-S Symp. Dig. High power and high efficiency AlInAs/GaInAs on InP HEMTs M. Maltobian(et al.)
- GaAs IC Foundry design manual(Process H40) The GEC-Marconi Company
- GaAs IC Foundry design manual(100um substrate passive components) The GEC-Marconi Company
- GaAs Monolithic microwave integrated circuit(MMIC) foundry fabrication services TRW Electronic Systems Group
- IEEE Trans. Microwave Theory and Tech. v.MTT-34 no.12 Cost effective high performance monolithic X-band low noise amplifiers D. C. Wang(et al.)
- IEEE Trans. Microwave Theory and Tech. v.MTT-33 no.12 X-band monolithic series feedback LNA R. Lehmann(et al.)
- IEEE Trans. Microwave Theory and Tech. v.MTT-33 no.12 Design and process sensitivity of a two-stage 6~18GHz monolithic feedback amplifier J. M. Beall(et al.)
- IEEE J. Solid-State Circuits v.28 no.10 110~120GHz monolithic low noise amplifiers H. Wang(et al.)
- IEEE MTT-S Dig. Ka-band ultra low noise MMIC amplifier using pseudomorphic HEMTs S. Fujimoto(et al.)
- IEEE MTT-S Dig. High performance high yield millimeter-wave MMIC LNAs using InP HEMTs L. T. Tran(et al.)
- IEEE Microwave and guide Wave Lett. v.8 no.11 An InP HEMT MMIC LNA with 7.2dB gain at 190 GHz R. Lai(et al.)
- IEEE Electron Device Lett. no.12 High-gain w-band pseudomorphic InGaAs power HEMTs D. C. Streit(et al.)
- in 1994 IEEE GaAs IC Symp. Dig. A novel w-band monolithic push-pull power amplifier H. Wang(et al.)
- IEEE Microwave and Guided wave letters no.10 A high-efficiency 94GHz 0.15m InGaAs/InAlAs/InP monolithic power HEMT amplifier R. Lai(et al.)
- IEEE Electron Device Lett. v.12 no.13 Elimination of mesasidewall gate leakage in InAlAs/InGaAs heterojunctions by selective side-wall recessing S. R. Bahl(et al.)
- IEEE Electron Device Lett. v.12 no.13 A 1.45W/mm, 30GHz InP-channel power HEMT O. Aina(et al.)
- IEEE 1993 Microwave and Millimeter Wave Monolithic Circuits Symp. A broad and planar doubly balanced monolithic Ka-band diode mixer S. A. Maas(et al.)
- IEEE Trans. Microwave Theory and Tech. v.MTT-37 no.10 Very small wide band MMIC magic-'s using microstrip lines on a thin film T. Hiraoka(et al.)
- IEEE Trans. Microwave Theory and Tech. v.MTT-35 no.6 Uniplanar MMIC hybrids-A proposed new MMIC structure T. Hirota(et al.)
- IEEE Trans. Microwave Theory and Tech. v.MTT-38 no.3 Reduced size branch line and rat race hybrids for uniplanar MMIC's T. Hirota(et al.)
- Microwave circuit design using linear and nonlinear techniques G. D. Vendelin(et al.)