감압화학증착의 이단계 성장으로 실리콘 기판 위에 증착한 in-situ 인 도핑 다결정 실리콘 박막의 미세구조 조절

Manipulation of Microstructures of in-situ Phosphorus-Doped Poly Silicon Films deposited on Silicon Substrate Using Two Step Growth of Reduced Pressure Chemical Vapor Deposition

For the well-controlled growing in-situ heavily phosphorus doped polycrystalline Si films directly on Si wafer by reduced pressure chemical vapor deposition, a study is made of the two step growth. When in-situ heavily phosphorus doped Si films were deposited directly on Si (100) wafer, crystal structure in the film is not unique, that is, the single crystal to polycrystalline phase transition occurs at a certain thickness. However, the well-controlled polycrtstalline Si films deposited by two step growth grew directly on Si wafers. Moreover, the two step growth, which employs crystallization of grew directly on Si wafers. Moreover, the two step growth which employs crystallization of amorphous silicon layer grown at low temperature, reveals crucial advantages in manipulating polycrystal structures of in-situ phosphorous doped silicon.