Journal of the Korean Electrochemical Society (전기화학회지)
- Volume 3 Issue 4
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- Pages.200-203
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- 2000
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- 1229-1935(pISSN)
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- 2288-9000(eISSN)
DOI QR Code
Crystalline Growth Properties of Diamond Thin Film Prepared by MPCVD
- Park Soo-Gil (Dept. of Industrial Chemical Engneering, Chungbuk National University) ;
- Kim Gyu-Sik (Dept. of Industrial Chemical Engneering, Chungbuk National University) ;
- Einaga Yasuaki (Dept. of Applied Chemistry, School of Engineering, The University of Tokyo) ;
- Fujishima Akira (Dept. of Applied Chemistry, School of Engineering, The University of Tokyo)
- Published : 2000.11.01
Abstract
Boron doped conducting diamond thin films were grown on Si substrate by microwave plasma chemical vapor deposition from a gaseous feed of hydrogen, acetone/methanol and solid boron. The doping level of boron was ca.
Microwave plasma chemical vapor deposition을 이용하여 붕소가 도핑된 전도성 다이아몬드 박막을 제조하였다. 탄소원으로는 아세톤과 메탄올을 사용하였으며, 붕소원으로는
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