전기전자학회논문지 (Journal of IKEEE)

  • 제3권2호
  • /
  • Pages.236-242
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  • 1999
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  • 1226-7244(pISSN)
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  • 2288-243X(eISSN)
한국전기전자학회 (Institute of Korean Electrical and Electronics Engineers)
권호 표지

BJT 베이스 분산저항의 1/f 잡음특성에 관한 연구

A Study on 1/f Noise Characteristics of the Base Spreading Resistance for BJT

  • Koo, Hoe-Woo (Dept. of Electronic Eng., Chungbuk National Univ.) ;
  • Lee, Kie-Young (Dept. of Electronic Eng., Chungbuk National Univ.)
  • 발행 : 1999.12.01
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초록

BiCMOS 공정으로 제조된 바이폴라 트랜지스터의 베이스 분산저항 ${\gamma}_{bb}$에서 발생되는 1/f 잡음을 실험 적으로 분석하였다. 공통컬렉터 잡음등가회로의 해석으로부터 $g_m^{-1}-{\gamma}_{bb}-R_B$값이 매우 작을 때는 출력측에서의 1/f 잡음은 순수하게 ${\gamma}_{bb}$에서 발생되는 잡음임을 실험을 통해서 확인할 수 있었다. $S^{1/f}_{Irbb}=K_fI_b{^{A_1}}/f$에서 $A_f=2,\;K_f{\simeq}5{\times}10^{-9}$를 얻었다. 그리고 Hooge상수 ${\alpha}$ 값은 ${\sim}10^{-3}$ 범위로 추출되었다.

J noise component due to base spreading resistance ${\gamma}_{bb}$ of bipolar junction transistors fabricated by BiCMOS process is experimentally analyzed. The analysis of equivalent noise circuit for common collector shows that output 1/f noise value is purely generated from ${\gamma}_{bb}\;when\;g_m^{-1}-{\gamma}_{bb}-R_B$ is closely to zero. From the $S^{1/f}_{Irbb}=K_fI_b{^{A_1}}/f$, we fine that $A_f=2,\;K_f{\simeq}5{\times}10^{-9}$. And Hooge constant ${\alpha}$ values are in the order, of 10$^{-3}$.

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참고문헌

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