산업기술연구 (Journal of Industrial Technology)

  • 제19권
  • /
  • Pages.101-105
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  • 1999
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  • 1229-9588(pISSN)
  • /
  • 1598-1371(eISSN)
강원대학교 산업기술연구소 (Kangwon National University, Institute of Industrial Technology)
권호 표지

RTMOCVD법에 의해 제조된 Ta2O5 박막의 특성

Characteristics of Ta2O5 thin film prepared by RTMOCVD

  • 소명기 (강원대학교 신소재공학과) ;
  • 발행 : 1999.12.31
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초록

Ultra thin $Ta_2O_5$ gate dielectrics were prepared by RTMOCVD (rapid thermal metal organic chemical vapor deposition) using Ta source $TaC_{12}H_{30}O_5N$ and $O_2$ gaseous mixtures. As a result, $Ta_2O_5$ thin films showed significantly low leakage current compared to $SiO_2$ of identical thickness, which was due to the stabilization of the interfacial layer by NO ($SiO_xN_y$) passivation layer. The conduction of leakage current in $Ta_2O_5$ thin films was described by the hopping mechanism of Poole-Frenkel (PF) type.

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과제정보

연구 과제 주관 기관 : 학술진흥재단