Journal of the Korean Institute of Telematics and Electronics D (전자공학회논문지D)
- Volume 36D Issue 1
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- Pages.38-46
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- 1999
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- 1226-5845(pISSN)
Fabrication and characterization of the 0.25 ${\mu}m$ T-shaped gate P-HEMT and its application for MMIC low noise amplifier
0.25 ${\mu}m$ T형 게이트 P-HEMT 제작 및 특성 평가와 MMIC 저잡음 증폭기에 응용
- Kim, Byung-Gyu (Dept. of Electronic and Electrical Engineering, POSTECH) ;
- Kim, Young-Jin (Dept. of Electronic and Electrical Engineering, POSTECH) ;
- Jeong, Yoon-Ha (Dept. of Electronic and Electrical Engineering, POSTECH)
- Published : 1999.01.01
Abstract
o.25
본 논문에서는 0.25
Keywords