한국표면공학회지 (Journal of the Korean institute of surface engineering)
- 제32권3호
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- Pages.467-471
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- 1999
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- 1225-8024(pISSN)
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- 2288-8403(eISSN)
DEPOSITION OF c-BN FILMS BY PULSED DC BIASING IN MAGNETICALLY ENHANCED ARE METHOD
- Lee, S.H. (Korea Institute of Machinery & Materials) ;
- Byon, E.S. (Korea Institute of Machinery & Materials) ;
- Lee, K.H. (Korea Institute of Machinery & Materials) ;
- J., Tian (Harbin Institute of Technology) ;
- Yoon, J.H. (Changwon National University) ;
- Sung, C. (Center for Advanced Materials,University of Massachusetts,Lowell,MA 01854,U.S.A) ;
- Lee, S.R.
- 발행 : 1999.06.01
초록
BN films were grown on silicon (l00) substrate by magnetically enhanced activated reactive evaporation (ME-ARE) with pulsed DC power instead of r.f. for substrate biasing. The deposited films were analyzed using Fourier transform infrared spectroscopy (FTIR) and transmission electron microscopy (TEM). FTIR results show that the intensity of absorption band of