Electrical and Optical Properties of SnO$_2$: F Thin Films by Reactive DC Magnetron Sputtering Method

반응성 DC 마그네트론 스퍼터법에 의한 SnO$_2$ : F 박막의 전기광학적 특성

  • Published : 1999.04.01

Abstract

Fluorine-doped $SnO_2$ thin films were deposited on soda-lime glass substrates by reactive DC magnetron sputtering method. Crystallinity as well as electrical and optical properties of $SnO_2$ : F thin film were investigated as the variations of deposition conditions such as substrate temperature, DC Power, $O_2$ gas pressure, $SF_6$ gas pressure. $SnO_2$ : F thin film deposited with 5% $SF_6$ gas pressure showed electrical resistivities of $2.5\times10^{-3}$cm with the average optical transparency (about 80%) These electrical and optical properties were found to be related to the crystallinity of $SnO_2$ : F thin films.

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