References
- Proc. IEEE 1991 Int. Conference on Microelectrinic Test Structures v.4 no.1 Material and process learning by non-contact characterization of minority carrier lifetime and surface recombination condition A. Usami
- J. Appl. Phys. v.72 no.7 Separation of the bulk and surface components of recombination lifetime obtained with a single laser/microwave photoconductance technique A. Buczkowski;Z. J. Radzimski;G. A. Rozgonyi;F. Shimura
- Jpn. J. Appl. Phys. v.30 no.11B Effect of ultraviolet light irradiation on noncontact laser microwave lifetime measurement K. Katayma;Y. Kirino;K. Iba;F. Shimura
- Phys. Rev. Lett. v.49 no.1 Surface studies by scanning tunneling microscopy G. Binnig;H. Rohrer;Ch. Gerber;E. Weibel
- Phys. Rev. Lett. v.56 no.9 Atomic force microscope G. Binnig;C. F. Quate;Ch. Gerber
- Oyo Buturi v.65 no.1 Scanning probe microscope for the investigation of biological samples T. Okada;K. Hori;Y. Hayashi
- 半導體シリコン結晶工學 志村 史夫
- J. Appl. Phys. v.64 no.2 Getting mechanism in silicon M. L. Polignano;G. F. Cerofolini;H. Bender;C. Claeys
- Semiconductor silicon crystal technology F. Shimura
- International Conference on VLSI and CAD, KITE/IEEE Korea section Microscopic aspects of gettering in Czochralski silicon S. Hahn
- Annual Book of ASTM Standards ASTM
- J. Appl. Phys. v.51 no.8 Influence of oxygen on silicon resistivity V. Cazcarra;P. Zunino
- Semiconductor material and device characterization D. K. Schroder
- J. Electrochem. Soc. v.124 no.5 A new preferential etch for defects in silicon crystals M. W. Jenkins
- Jpn. J. Appl. Phys. v.32 no.9B Carrier lifetime measurements by microwave photoconductive decay method at low injection levels C. Fujihira;M. Morin;H. Hashizume;J. Friedt;Y. Nakai;M. Hirose