A Study on the Electrical Properties of Pt Thin film RTD for Temperature Sensor

온도센서용 Pt박막 측온저항체의 전기적 특성에 관한 연구

  • 문중선 (울산대학교 재료, 금속 공학부) ;
  • 정광진 (울산대학교 재료, 금속 공학부) ;
  • 최성호 (울산대학교 재료, 금속 공학부) ;
  • 조동율 (울산대학교 재료, 금속 공학부) ;
  • 천희곤 (울산대학교 재료, 금속 공학부)
  • Published : 1999.02.01

Abstract

Pt thin film of about 7000$\AA$ thickness was deposited on the alumina substrate using DC Magnetron Sputter and the characteristics of the film for temperature sensor were investigated. When film of about 7000$\AA$ thickness was deposited at working gas pressure of $2.0{\times}10^{-3}$torr, sputtering power of 50W, substrate temperature of $350^{\circ}C$(Ts), sheet resistance(Rs), resistivity($\rho$) and temperature coefficient of resistivity(TCR) of the film were respectively 0.39$\Omega$/$\square$, 27.60$\mu\Omega$-cm and $3350 ppm/^{\circ}C$. When the film was annealed at $1000^{\circ}C$ for 240min in hydrogen ambient, Rs, $\rho$ and TCR were respectively 0.236$\Omega$/$\square$, 15.18$\mu\Omega$-cm and 3716 ppm/$3716 ppm/^{\circ}C$. When working gas of 15sccm oxygen and 100sccm Argon were used, Rs, $\rho$ and TCR were respectively 0.335$\Omega$/$\square$, 22.45$\mu\Omega$-cm and $3427 ppm/^{\circ}C$. When the film was annealed at $1000^{\circ}C$ for 240min, Rs, $\rho$and TCR were respectively 0.224/$\Omega$$\square$, 14$\mu\Omega$-cm and $3760 ppm/^{\circ}C$ and the characteristics of the film were much improved.

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