Journal of the Korean Vacuum Society (한국진공학회지)

The Korean Vacuum Society (한국진공학회)
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Characteristic absorbance of AlGaN epilayers grown on sapphire substrate

사파이어 기판 위에 성장된 AlGaN 에피층의 광 흡수 특성

  • 김제원 (한국과학기술연구원, 반도체연구실) ;
  • 박영균 (한국과학기술연구원, 반도체연구실) ;
  • 김용태 (한국과학기술연구원, 반도체연구실) ;
  • 최인훈 (고려대학교 재료공학과)
  • Published : 1999.03.01
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Abstract

The dependence of the absorption edge of wurtzite $Al_xGa_{1-x}N$ on alN mole fraction has been studied. The AlN mole fraction was varied from 0 to 1. The absorption coefficients at room temperature were determined by transmission and photothermal deflection spectroscopy. Photothermal deflection spectroscopy can be applied to determine the low absorbance values. From the results, the effective bandgaps of $Al_xGa_{1-x}N$ alloys were determined by choosing corresponding photon energies of the positions of the absorption coefficient of $6.3\times10^4\textrm{cm}^{-1}$ at the absorption curves of the $Al_xGa_{1-x}N$ alloys. From the energy position of the absorption coefficient versus AlN mole fraction, a bowing parameter of 1.3eV was determined. The bowing parameter agreed quite well with the measured effective bandgaps of AlGaN alloys.

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