Journal of the Korean Vacuum Society (한국진공학회지)

The Korean Vacuum Society (한국진공학회)
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INAs epitaxial layer growth for InAs Hall elements

Hall 소자용 InAs 박막성장

  • Kim, S.M.Leem, J.Y.Lee, C.R.Noh, S.K.Shin, J.K.Kwon, Y.S.Ryu, Y.H.Son, J.S.Kim, J.E. (Dept. of Electronics, Kyungpook Nat. Univ.Materials Evaluation Center, Korea Research Institute of Standards and ScienceMaterials Evaluation Center, Korea Research Institute of Standards and ScienceMaterials Evaluation Center, Korea Research Institute of Standards and ScienceDept. of Electronics, Kyungpook Nat. Univ.Dept. of Physics, Kyunghee Univ.Dept. of Physics, Kyunghee Univ.Dept. of Physics, Yeungnam Univ.Daeyang Electric Co.)
  • 김성만임재영이철로노삼규신장규권영수유연희손정식김지언 (경북대학교 전자공학과한국표준과학연구원 물질량표준부한국표준과학연구원 물질량표준부한국표준과학연구원 물질량표준부경북대학교 전자공학과경희대학교 물리학과경희대학교 물리학과영남대학교 물리학과대양전기(주))
  • Published : 1999.11.01
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Abstract

We studied the properties of the InAs epitaxial layers grown of (100)-oriented GaAs ($2^{\circ}$tilted toward[011]) by molecular beam epitaxy. From DCX (double-crystal x0ray), the better crystal quality was shown in InAs epitaxial layers on about 2500$\AA$ GaAs epitaxial layers on GaAs, we obtained the high mobility of InAs epitaxy in As/In BEP ratio (1.2~2.0) from Hall effect measurement. The electron mobility increased as electron concentration increases, until Si cell temperature $960^{\circ}C$$(N_D=2.21\times10^{-17}\textrm{cm}^{-3})$. The mobility decreases as the Si cell temperature increases, at the temperature over $960^{\circ}C$. We obtained the high mobility (1.10$\times$104cm2/V.s) at Si electron concentration of $N_D=2.21\times10^{-17}\textrm{cm}^{-3}$.

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