Low-voltage characteristics of E-beam evaporated MgO-CaO films as a protective layer for AC PDPs

전자빔 증착법으로 증착한 MgO-CaO 박막의 교류형 PDP 보호막 적용을 위한 저전압 특성 연구

  • Published : 1999.02.01

Abstract

MgO-CaO protective layers with various composition were prepared by electron beam evaporation to improve the characteristics of conventional pure MgO thin films as a protective layer for AC-PDP. The maximum deposition rate of pure MgO was 1025 $\AA$/min and decreased with increasing [(CaO/(MgO+CaO)] ratio of evaporation starting materials. From XRD analyses, a trend of peak shift to the lower 2$\theta$ angle side was shown as CaO content increased and it stoped when the concentration of CaO was 0.13, which corresponds to the maximum solubility of CaO in MgO. The optimum composition of the protective thin films was Mg 47.1 at%, Ca 1.3 at%, O 51.6 at%, and firing voltage, memory margin and deposition rate of the film with this composition was 176 V, 0.5 and 515 $\AA$/min, respectively.

Plasma Display Panel(PDP)에서 보호막 물질로 사용중인 MgO 특성을 개선하기 위하여 본 연구에서는 MgO-CaO 박막을 전자빔 증착법으로 제조하였다. MgO 최대 증착속도는 1025 $\AA$/min이었으며 CaO 첨가비가 증가함에 따라 증착속도는 감소하였고, XRD 패턴은 전체적으로 낮은 2$\theta$각 방향으로 이동하였다. MgO 대한 CaO의 최대 고용도는 0.13이다. 최적전압특성을 나타낸 조성은 Mg 47.1 at%, Ca 1.3 at%, O 51.6 at%이었으며 이때 방전개시전압은 176 V, 메모리마진은 0.5였으며 증착속도는 515$\AA$/min이었다.

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References

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