Design of MOSFET-Controlled FED integrated with driver circuits

In this paper, the design of one-chip FED system integrated with driving circuits in reported on the basis of MOSFET controlled FEA (MCFEA). To integrate a MOSFET with a FEA efficiently, a new fabrication process is proposed. It is confirmed that the MOSFET with threshold voltage of about 2volts controls the FEA emission current up to 20 ${\mu}$A by applying driving voltage of 15 volts, which is enough current level to utilize the MCFEA as a pixel for FED. The drain breakdown voltage of the MOSFET is measured to be 70 volts, which is also high enough for 60 volt operation of FED. The circuits for row and column driver are designed stressing on saving area, reducing malfunction probability and consuming low power to maximize the merit of on-chip driving circuits. Dynamic logic concept and bootstrap capacitors are used to meet these requirements. By integrating the driving circuit with FEA, the number of external I/O lines can be less than 20, irrespectively of the number of pixels.