참고문헌
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- Semicond. Sci. Technol. v.10 Ferroelectric Thin Film Technology for Semiconductor Memory R. Moazzami
- Jpn. J. Appl. Phys. v.33 Dielectric Properties of (111) and (100) Lead-Zirconate-Titanate Films Prepared by Sol-gel Technique K. Aoli;Y. Fukuda;K. Numata;A. Nishimura
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Thin Solid Films
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Dopant Compensation Mechanism and Leakage Current in
$Pb(Zr_0.52Ti_0.48)O_3$ Thin Films C. K. Barlingay;S. K. Dey -
J. Mater. Res.
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Formation Kinetics of
$PbZr_xTi_{1-x}O_3$ Thin Films C. K. Kwok;S. B. Desu -
Jpn. J. Appl. Phys.
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Preparation and Characterization of Sol-gel Derived Epitaxial and Oriented
$Pb(Zr_0.52Ti_0.48)O_3$ Thin Films K. Nashimoto;S. Nakamura - Integrated Ferroelectrics v.2 Improved Switching Endurance of Lead Zirconate-Titanate Capacitors for Nonvolatile Memory Applications I. K. Naik;L. E. Sanchez;S. Y. Wu;B. P. Maderie
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Preparation and Ferroelectric Properties of
$Pb(Zr_0.53Ti_0.47)O_3$ Thin Films by Spin Coating and Metalorganic Decomposition G A. C. M. Spierings;M. J E Ulenaers;G. L. M. Kampschoer;H. A. M. van Hal;P K. Larsen -
Jpn. J. Appl. Phys.
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Depolarization Characteristies in Sol-gel Ferroelectric
$Pb(Zr_0.4Ti_0.6)O_3$ Thin Film Capacitors T. Mihara;H. Yoshimoti;H. Watanabe;C. A. Araujo - J. Appl. Phys. v.78 Stress in Pt/Pb(Zr.Ti)O₃/Pt Thin-film Stacks for Integrated Ferroelectric Capacitors G. A. C. M Spierings;G J M Dormans;W. G. J. Moors;M J E. Ulenaers;P K. Larsen
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Electrode for
$Pb(ZrxTi_{1-x})O_3$ Ferroelectric Thin Films D. P. Vijay;S. B. Desu -
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Ferroelectric Properties and Fatigue of
$Pb(Zr_0.51Ti_0.49)O_3$ Thin Films of Varying Thickness: Blocking Layer Model P. K. Larsen;G. J. M. Dormans;D. J. Taylor;P. J. van Veldhoven