Abstract
The rare-earth ions ($R^{3+}$, R=Nd, Er) doped $CaF_{2}$ layers have been grown on $CaF_{2}$ (111) substrate by molecular beam epitaxy. The surface structure and the crystallinity of $CaF_{2}:R^{3+}$ layers depending on the doping concentration of $R^{3+}$ and layer thickness were studied by reflection high-energy electron diffraction (RHEED). In aspect of application as buffer layer in semiconductor-related hybrid structure, the lattice displacement between $CaF_{2}:R^{3+}$ layers and $CaF_{2}$ (111) substrate was investigated by X-ray rocking curve analysis.
Molecular beam epitaxy법으로 $CaF_{2}$ (111) 기판위에 희토류 이온 ($(Nd^{3+},\;Er^{3+})$) 첨가 $CaF_{2}$ 박막을 성장하였다. 첨가농도와 박막두께에 따른 희토류 첨가 $CaF_{2}$ 박막의 표면구조와 결정성을 RHEED로 검토하였다. 반도체 관련 고집적회로구조에 있어서의 완층막으로서의 응용을 고려하여, 희토류첨가 $CaF_{2}$ 박막과 $CaF_{2}$ (111) 기판과의 격자부정합의 변이를 X-ray rocking Curve 분석에 의해 검토하였다.