The Transactions of the Korean Institute of Electrical Engineers C (대한전기학회논문지:전기물성ㆍ응용부문C)

The Korean Institute of Electrical Engineers (대한전기학회)
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The Effects of the Drive-in Process Parameters on the Residual Stress Profile of the $p^+$ Silicon Thin Film

후확산 공정 조건이 $p^+$ 실리콘 박막의 잔류 응력 분포에 미치는 영향

  • 정옥찬 (아주대 공대 제어계측공학과) ;
  • 박태규 (아주대 공대 제어계측공학과) ;
  • 양상식 (아주대 공대 제어계측공학과)
  • Published : 1999.09.01
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Abstract

The paper represents the effects of the drive-in process parameters on the residual stress profile of the $p^+$ silicon film. Since the residual stress profile is notuniform along the direction normal to the surface, the residual stress is assumed to be a polynomial function of the depth. All the coefficients of the polynomial can be determined by measuring of the thicknesses and the deflections of cantilevers and the deflection of a rotating beam with a surface profiler meter and a microscope. As the drive-in temperature or the drive-in time increases, the boron concentration decreases and the magnitude of the average residual tensile stress decreases. Then, near the surface of the $p^+$ film the residual tensile stress is transformed into the residual compressive stress and its magnitude increases.

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References

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