태양에너지 (Solar Energy)

한국태양에너지학회 (The Korean Solar Energy Society)
권호 표지

MOCVD를 이용한 GAs/Si 태양전지의 제작과 특성에 관한 연구

A Study on Fabrication and Properties of the GaAs/Si Solar Cell Using MOCVD

  • 차인수 (동신대학교 전기전자공학과) ;
  • 이만근 (한국에너지기술연구소 태양광 시스템실)
  • Cha, I.S. (Dongshin University, Dept. of Electrical Eng.) ;
  • Lee, M.G. (Korea Institute of Energy Research)
  • 발행 : 1998.09.30
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초록

In this paper, the current status of manufacturing technologies for GaAs/Si solar cell were revived and provied new MOCVD. In the manufacturing process of GaAs/Si solar cells and an experiment to get the high efficiency GaAs solar cells, we must investigate the optimum growth conditions to get high quality GaAs films on Si substrates by MOCVD. The GaAs on Si substrates has been recognized as a lightweight alternative to pure substrate for space applicaton. Because its density is less the half of GaAs or Ge.So GaAs/Si has twofold weight advantage to GaAs monolithic cell. The theoretical conversion efficiecy limit of tandem GaAs/Si solar cell is 32% under AM 0 and $25^{\circ}C$ condition. It was concluded that the development of cost effective MOCVD technologies shoud be ahead GaAs solar cells for achived move high efficiency III-V solar cells involving tandem structure.

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