Bulletin of the Korean Chemical Society

Korean Chemical Society (대한화학회)
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Relaxation of Photogenerated Carriers under He, $H_2, Co_2 and\; O_2$ on ZnO

  • Published : 1998.06.20
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Abstract

The relaxation process of photogenerated carriers was investigated using conductivity measurement on ZnO under He, $H_2,\; CO_2\; and\; O_2$. The process was well explained with the rate constant of reaction or recombination of hole and electron, $k_h \;and\; k_e ( k_h > k_e)$, respectively. Generally, $k_h$ increased with the pressure of the gases. The slope of $k_h$ with respect to the pressure increased in the order of $H_2{\le}He, while $k_h$ of $O_2$ was sensitive to the history of the sample. The relaxation process on ZnO which was exposed to oxygen at 298 K and 573 K was observed during the illumination at 298 K and it was found that the rate constant of hole decreased with illumination time. From the result, it was suggested that the rate constant of photogenerated excess carriers was affected by the surface barrier of the semiconductor.

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