References
- 지워지지 않는 메모리-FRAM에 관하여- 川合;知二 著
- IEEE Trans. Electron Devices v.10 no.9 A new solid state memory resistor J. L. Moll;Y. Tarui
- IEEE Trans. Electron Devices v.21 no.8 A new ferroelectric memory device metal-ferroelectric-semiconductor transistor S. Y. Wu
- IEDM Tech. Dig. A non-volatile memory cell based on ferroelectric storage capacitors W. I. Kinny;W. Shepherd;W. Miller;J. Evans;R. Womack
- IEEE Electron Device Lett. v.18 no.4 Nonvolatile memory operation of metal-ferroelectric-insulator-semicon-(100) structures E. Tokumitsu;R. Nakamura;H. Ishiwara
- IEDM Tech. Dig. Metal-ferroelectric-semiconductor field-effect transistor for single transistor memory by using poly-Sisource/drain and BaMgF4 dielectric J.-S. Lyu;B.-W. Kim;K.-H.Kim;J.-Y. Cha;H. J. Yoo
- Jpn. J. Appl. Phys. v.36 no.9B Development of low dielectric constant ferroelectric materials for the ferroelectric memory field effect transistor Y. Fujimori;N. Izumi;T. Nakamura;A. Kamisawa;Y. Shigematsu
- US patent 5,592,409
- US patent 5,412,596
- US patent 5,515,311
- Nikkei Microdevices no.8월호
- 月刊 Semiconductor World no.3월호
- Nikkei Microdevices no.8월호
- Scientific American Smart Cards C. H. Fancher
- Card Technology
- J. Appl. Phys. v.46 no.7 Ferroelectric field-effect memory device using Bi4Ti3012 film K. Sugibuchi;Y. Kurogi;N. Endo
- Private communication