전자공학회지 (The Magazine of the IEIE)

대한전자공학회 (The Institute of Electronics and Information Engineers)
권호 표지

DVD용 650nm InGaP/InGaAIP 레이저 다이오드

  • 김동환 (LG종합기술원 소자재료연구소) ;
  • 장준호 (LG종합기술원 소자재료연구소) ;
  • 유태경 (LG종합기술원 소자재료연구소)
  • Kim, Dong-Hwan (LG Corporate Institute of Technology, Devices and Materials Lab.) ;
  • Jang, Jun-Ho (LG Corporate Institute of Technology, Devices and Materials Lab.) ;
  • Yu, Tae-Gyeong (LG Corporate Institute of Technology, Devices and Materials Lab.)
  • 발행 : 1998.06.01
PDF 다운로드
⟨ 이전 논문 다음 논문 ⟩

초록

키워드

참고문헌

  1. Appl. Phys. Lett. v.50 Evidence for the existence of an ordered state in $GaGa{_0.5}In{_0.5}P$ grown by metalorganic vapor phase and its relation to band-gap energy A. Gomoyo;T. Suzuki;K. Kobayashi;S. Kawata;L. Hino;T. Yuasa
  2. J. crystal Growth v.146 Ordering in GaInP grown at low temperatures L.C. Su;H. Ho;G.B. stingfellow
  3. J. crystal Growth v.93 Growth temperature dependent atomic arrangement and their role on band gap of InGaAlP alloys grown by MOCVD C. Nozaki;Y. Ohba;H. Sugawara;S. Yasuami;T. Nakanisi
  4. Quantum Well Laser Peter S. Jory, Jr(Ed.)
  5. Physics of Semiconductor Lasers Bohdan Mroziewicz;Maciej Bugajski;Wlodzimierz Nakwaski
  6. J. Appl. Phys. v.76 Crystallographic orientation dependence of impurity incorporation into lll-V compound semiconductors grown by metalorganic vapor phase epitaxy M. Kondo;C. Anayama;N. Okada;H. Sekiguchi;K. Domen;T. Tanahashi
  7. IEEE J. Select. Topics Quantum Electron v.1 Hydrogen effect on 670-nm AlGaInP visible laser during high temperature operation Won-Jin Choi;Ji-Ho Jang;Won-Taek Choi;Seung-Hee Kim;Jong-Seok Kim;Shi-Jong Leem;Tae-Kyung Yoo
  8. J. Appl. Phys. v.80 Dependence of InGaP/InGaAlP heterointerface smoothness on substrate misorientation Minoru Watanabe;Masaki Okajima
  9. IEEE J. Select. Topics Quantum Electron v.1 Optimum tensile-strained multiquantumwell structures of 630nm band InGaAlP lasers for high temperature and reliable operation Minoru Watanabe;Hatsumi Matsuura;Naohiro Shimada;Hajime Okuda
  10. presented at the 22nd International Symposium on Compound Semiconductor Very low threshold cuurent 630nm band AlGaInP single quantum well laser with strain compensated layers Won-Jin Choi;Jong-Seok Kim;Meoung-Whan Cho;In-Sung Cho;Shi-Jong Leem;Tae-Kyung Yoo
  11. IEEE J. Select. Topics Quantum Electron. v.3 Strain-compensated GaInP-AlGaInP quantum well laser structures for improved reliability at high output powers A. Valster;A.T. Meney;J. R. Downes;D.A. Faux;A.R. Adams;A.A. Brouwer;A. J. Corbijn
  12. IEEE J. Quantum Electron. v.29 Drift leakage current in AlGaInP quantum well lasers David P. Bour;David W. Treat;Robert L. Thornton;Randall S. Geels;David F. Welch
  13. IEEE J. Quantum Electron. v.30 Strained $Ga_xIn_{1-x}P/(AlGa)_{0.5}In_{0.5}P$ heterostructures and quantum laser diodes D.P. Bour;R.S. Geels;D.W. Treat;T.L. Paoli;F. Ponece;R.L. Thornton;B.S. Krusor;R.D. Bringans;D.F. Welch