Journal of the Korean Vacuum Society (한국진공학회지)
- Volume 7 Issue s1
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- Pages.134-139
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- 1998
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- 1225-8822(pISSN)
Field Emission Characteristics a-C:F:N Film Deposited by Inductively Coupled Plasma Chemical Vapor Deposition
- Jae, Chung-Suk (Department of Physics, Kyung Hee University) ;
- Jung, Han-Eun (Department of Physics, Kyung Hee University) ;
- Jang Jin (Department of Physics, Kyung Hee University)
- Published : 1998.07.01
Abstract
Amorphous fluorocarbon (a-C:F) is of interest for low dielectric interlayer material, but in this work we applied this material to FED field emitter. N-doped a-C:F films were deposited by inductively coupled plasma chemical vapor deposition (ICPCVD). The Raman spectra were measured to study the film structure and inter-band optical absorption coefficients were measured using Perkin-Elmer UV-VIS-IR spectrophotometer and optical band gap was obtained using Tauc's plot. XPS spectrum and AFM image were investigated to study bond structure and surface morphology. Current-electric field(I-E) characteristic of the film was measured for the characterization of electron emission properties. The optimum doping concentration was found to be [N2]/[CF4]=9% in the gas phase. The turn-on field and the emission current density at
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