Journal of Korean Vacuum Science & Technology

The Korean Vacuum Society (한국진공학회)
권호 표지

High energy ion implantation system with tandem accelerator

  • Kim, Y. S. (Korea Institute of Geology, Mining and Materials, Taejon 305-350) ;
  • Woo, H. J. (Dept. of Metallurgical Engineering, Hanyang University (Received may 15, 1997)) ;
  • Choi, H. W. (Dept. of Metallurgical Engineering, Hanyang University (Received may 15, 1997)) ;
  • Kim, G. D. (Dept. of Metallurgical Engineering, Hanyang University (Received may 15, 1997)) ;
  • Kim, J. K. (Dept. of Metallurgical Engineering, Hanyang University (Received may 15, 1997)) ;
  • Shin, H. K. (Samsung electronics Co., LTD, Suwon 449-900, Korea (Reveived Jul 7, 1997))
  • Published : 1998.04.01

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Abstract

A MeV ion implantation system with an 1.7 MV tandem Van de Graaff accelerator has been in the Korea Institute of Geology Mining and Materials. Almost all ions from hydrogen to uranium with several MeV can be implanted. The implantation system consists of a raster beam scanner with scanning frequency 64${\times}$517 Hz, a target holder capable of holding 5${\times}$5㎤ sample, a target cooler, an electron flooding gun and a Faraday cup with electron suppressor. The energy range of ions are from about 200 keV to 3.4 MeV in the case of hydrogen and about 200 keV to 12MeV for As for instance. The maximum beam current at the target is about 5${\mu}\textrm{A}$ depending on the ion production capability of the ion sources. The implantation nonuniformity is about 6%. the performance of the charge neutralization system is shown.

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