Carrier concentration-dependence of field emission from GaN

  • Park, J. M. (Department of Physics, University of Ulsan, Usan 680-749 Korea) ;
  • Chung M. S. (epartment of Physics, University of Ulsan, Usan 680-749 Korea)
  • Published : 1998.04.01

Abstract

The field emission current from a n-type GaN is theoretically calculated as a function of carrier concentration n. Among the carrier-induced effects are considered internal voltage drop and band gap shirnkage. The obtained emission current density j increases slowly with increasing n. It is also found that the internal voltage drop due to field penetration is a crucial factor, while the band gap shrink-age effect is meaningful only in high carrier concentrations.

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