Electrical Properties and Point Defect Types of Semiconducting Rutile

반도성 rutile의 전기적 성질 및 점결함 형태

  • Baek, Seung-Bong (Department of Ceramics Engineering, Changwon National University) ;
  • Kim, Myeong-Ho (Department of Ceramics Engineering, Changwon National University)
  • 백승봉 (창원대학교 세라믹공학과) ;
  • 김명호 (창원대학교 세라믹공학과)
  • Published : 1998.10.01

Abstract

The electrical conductivity of undoped mtile was measured in the oxygen partial pressure range of $1~10{-23}$atm and temperature range of $700~1300^{\circ}C$ to investigate the defect types and the electrical properties. The data(logu/logPoz) were divided into the five regions. Therefore the five dominant defect types such as $Ti_nO_{2n-1}$, Ti, Vo, Vo due to impurity, and n-p transition or p-type conduction with the Poz and the temperature were proposed. The formation enthalpies calculated from these experimental results were found to be 10.2eV for Ti, and 4. 92eV for Vo in intrinsic range.

순수한 Rutile에서 점결함의 형태와 전기적 특성을 연구하기 위해 $1~10{-23}$atm의 산소분압 범위 및 $700~1300^{\circ}C$의 온도 범위에서 전기전도도를 측정하였다. 전기전도도의 산소분압 의존성($log\sigma/logPo_2$)으로부터 산소분압 및 온도 변화에 따라 다음과 같은 지배적인 결함들을 제안한다. 1) $Ti_nO_{2n-1}$, 2)침입형 Ti 이온 3)2가로 하전된 산소빈자리 4)불순물에 의해 형성된 2가로 하전된 산소빈자리 5) n-p전이 및 p형 전도 또한, 고유범위의 실험결과로부터 계산한 Ti와 Vo의 결함형성 엔탈피는 각각, 10.2eV와 4.92eV였다.

Keywords

References

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